Samsung Electronics announced in April 5th, has been the world's first to achieve the 10nm level process DRAM DDR4 memory particle production, but also following the first mass production in 2014 after DDR3 20nm memory particles and a feat. Samsung not disclose the specific number of new technology, only vaguely referred to as 10 nm level or 1xnm. And according to the South Korean media had reported that Samsung is 18NM, to continue leading SK Hynix and micron rivals such as.
Samsung said the new technology to overcome the DRAM Industry in a
number of technical challenges, including the unique technology of unit
design, four heavy exposure (QPT) technology, thin dielectric layer
deposition technique and so on, and still use the existing ARF immersion
lithography process, has not been opened are expensive and not mature
EUV extreme ultraviolet lithography.
New 1xnm DDR4 memory particles single capacity 8GB (1GB) for
frequencies up to 3200mhz, in the performance of DDR4-2400 20nm process
under the can be increased by 30% compared with, also same frequency
power reduce 10-20%, PC, server mainstream, large enterprise networks,
high performance computing system has broad prospects, single capacity
maximum do 128GB.
Later this year, Samsung will also use the new technology to produce
new mobile DRAM memory particles, for the field of smart phones and
Slow down along with the expansion of the arrival of the new
technology, capacity and the growth of PC demand decline, the demand for
mobile phones, memory prices will be in this year appear decline, in
the second half of the year will be at least 20-30% reduction of up to
40%. Samsung 18NM joined the fray, will further stimulate the price
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