Pickering once again expand PXI RF multiplexer series

As the field of electronic test and simulation of signal switches and modular instrument products leader, UK Pickering once again expanded its PXI 50Ω 600MHz RF multiplexer series product line, the new series designed 18 different configurations, including a Dual Slot PXI 32: 1 multiplexer switch module.


The latest series PXI RF multiplexing switch (40-760 series) offer several different configurations: two, four, eight groups SP4T; single, double, four SP8T; single, dual SP16T; and single group SP32T. Each multiplexers switch products also provide an automatic termination versions to optimize VSWR, thereby reducing the impact on the overall test system performance.
The series PXI RF multiplexer used in all current forefront of relay technology, the product has a very low insertion loss and VSWR. Each version is carefully designed to ensure the best performance in the 600MHz, repeatable RF switching characteristics, insertion loss metrics for each channel are very close.
By optimizing the mechanical and electronic design, to ensure the greatest degree of 40-760 series can suppress external noise coupling into the signal path.
This series is compatible with all specifications meet the PXI chassis and is compatible with mixed slot PXIe chassis. Can also be installed to Pickering's modular LXI chassis, operated via the Ethernet interface.
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Samsung to become the world's first mass production of 10nm level of memory of the company

Samsung Electronics announced in April 5th, has been the world's first to achieve the 10nm level process DRAM DDR4 memory particle production, but also following the first mass production in 2014 after DDR3 20nm memory particles and a feat. Samsung not disclose the specific number of new technology, only vaguely referred to as 10 nm level or 1xnm. And according to the South Korean media had reported that Samsung is 18NM, to continue leading SK Hynix and micron rivals such as.
Samsung said the new technology to overcome the DRAM Industry in a number of technical challenges, including the unique technology of unit design, four heavy exposure (QPT) technology, thin dielectric layer deposition technique and so on, and still use the existing ARF immersion lithography process, has not been opened are expensive and not mature EUV extreme ultraviolet lithography.
New 1xnm DDR4 memory particles single capacity 8GB (1GB) for frequencies up to 3200mhz, in the performance of DDR4-2400 20nm process under the can be increased by 30% compared with, also same frequency power reduce 10-20%, PC, server mainstream, large enterprise networks, high performance computing system has broad prospects, single capacity maximum do 128GB.
Later this year, Samsung will also use the new technology to produce new mobile DRAM memory particles, for the field of smart phones and peace machine.
Slow down along with the expansion of the arrival of the new technology, capacity and the growth of PC demand decline, the demand for mobile phones, memory prices will be in this year appear decline, in the second half of the year will be at least 20-30% reduction of up to 40%. Samsung 18NM joined the fray, will further stimulate the price decline.
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Olufsen & OLED and LG Electronics Co developed Bang TV

Denmark consumer electronics product company Bang & Olufsen plans with the world's largest television producer and a leading OLED and network operating system technology company LG signed a strategic technology partnership agreement.
According to the agreement, Olufsen & Bang will focus on the development of its combination with the television design, acoustics and smart home core competitiveness, and with the LG in the OLED aspects of the professional and technical combination.
Bang & Olufsen CEO Mantoni Tue said: the partnership with LG will promote the Bang & Olufsen to go to the forefront of innovation in the TV type. TV variety is currently undergoing major changes, the Bang & Olufsen is also very important. This partnership will help Olufsen & Bang to respond to the challenges associated with scale and complexity."
As Bang & Olufsen will achieve the required technical capabilities and scale of the long-term profitability of the company, the establishment of a partnership will help to resolve a major strategic challenge. This cooperation has prompted Bang & Olufsen to focus on the core competencies of acoustics and design, and further optimize the company's supply chain, development, production and service.
In partnership with Bang Olufsen & LG production of the first OLED TV is expected to launch in 2017. Partnership also includes licensing and product bundling activities, and other aspects of cooperation.
After establishing partnership, Olufsen & Bang is expected to increase gross profit and reduce the cost of production capacity. After the signing of the agreement, the next three years to save 1500-2000 million Danish crown.
In addition, Bang & Olufsen is also expected to achieve restructuring costs 1000-1500 million Danish crown, of which the 5 million Danish crown will be achieved in the fourth quarter of 2016.
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7Nm process will become the main battlefield of Intel electric pressure

Security plan (ARM) and Taiwan TSMC announced a multi-year agreement and cooperation for 7 nm FinFET process technology, including support of future of low power consumption, high efficiency can operation system-on-a-chip (SOC) design solutions. This agreement is a continuation of the previous Artisan ARM based entity IP 16 nm and 10 nm FinFET cooperation.
In fact, TSMC currently advanced production process process, belong to the same generation of 10 nm, 7 nm process has to catch up, even beyond the competitors Intel (Intel).
Taiwan semiconductor electric advanced process of 10 nm, 7 nm, 5 nm, and other parts, all processes are all on schedule10 nanometer process to the first quarter of 2016 finished product certification, and 10 nm / nanotechnology applications is very extensive, such as mobile phones, higher-order networking, gaming, wearable and, with the rapid transmission efficiency and low power consumption, and 7 nm is expected to 2018 Season 1 to start mass production.
It is understood, Intel estimates in 2018 to determine production 10 nm and 7 nm estimated to 2019, and Samsung Electronics (Samsung Electronics) at 10 nm progress is uncertain, TSMC in 10 / 7 nanometer generation has displayed its ambition, and launched a multi client layout.
Part of the downstream industry, said may not be using 10 nanometer products, such as 20 nm to 16 nm process transition products, but 7 nm is locked for the next generation the main goal of the, and the Taiwan product long-term contracts and arm concluded also established 7 nm in the future will become the main battlefield of International manufacturers.
According to TSMC in previous corporate open that argument, 7 nm process can be provided in the 2018 Season 1, and in accordance with the Taiwan semiconductor electrical plans, 5 nm will be launched in 2 years after 7 nm process, in about 2020 half visible clue.
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Sony years to improve the status of the TV company set up video loss smartphones

In recent years, Sony has been unrest continued, losses for many years, serious internal divisions. Recently, the Japanese media reported that Sony starting from October 1 this year, the establishment of Sony AV companies, music players, home theater systems, Blu-ray devices, which contain video and music departments will be transferred to Sony's audio and video.

Sony's move is intended to improve the status of the company sustained losses. Earlier rumors that Sony will sell a more serious loss of smart phones and smart TV services. Sony Mobile's president and CEO, recently affirmed Hiroki Totoki expressed in the "Arabian Business" interview, Sony Mobile will complete the restructuring in 2015, and is expected to maximize revenue by the end of 2016.

2-D-semiconductor of phosphorus and arsenic as an alternative to silicon

Chemists at the Technische Universitaet Muenchen (TUM) have developed a two-dimensional semiconductor, in which individual phosphorus atoms are replaced by arsenic. Within the framework of international cooperation they built it together with American colleagues first field-effect transistors.

For many decades, silicon is the basis of modern electronics. So far could produce ever smaller transistors, the silicon technology for smaller and smaller devices, the size of silicon transistors is gradually beginning to their physical limit. Silicon is also hard and brittle, but would consumers like to flexible devices, devices that can be incorporated into clothing and much more. All this has a race for new materials triggered that could replace silicon one day.

Such a material could be arsenic-containing black phosphorus. As the graph consisting of a single layer of carbon atoms, it forms thin layers. The range of its applications ranging from transistors, sensors to mechanical-flexible semiconductor devices. Unlike the graph whose electronic behavior is similar to that of metals, it behaves like a semiconductor.

Phosphors instead of graph

In a cooperation between the Technical University of Munich and the University of Regensburg on the German side and the American Universities University of Southern California (USC) and Yale field effect transistors of arsenic-containing black phosphorus have now been produced for the first time. The compounds synthesized Marianne Kopf laboratory of the department for synthesis and characterization of innovative materials at the TU Munich. The field effect Trasistoren were built and measured in the group of Professor Zhou and Dr. Liu.

Developed at TU Munich new method makes it possible to synthesize black arsenic-phosphorus without high pressure. This requires less energy and is cheaper. About the arsenic content, the gap between valence and conduction bands can be precisely adjusted. "This allows us to produce materials with previously unattainable electronic and optical properties in an energy window that was previously inaccessible," says Professor Tom Niges, head of the department for synthesis and characterization of innovative materials.

Detectors for infrared

In an arsenic content of 83%, the material has a band gap of 0.15 eV only. For such a material, for example sensors can be constructed that detect wavelengths in the far infrared. In this area, for example, LiDAR sensors operate (Light Detection and Ranging). They are used inter alia in cars as distance sensors. Another application is the measurement of dust particles and trace gases in the environmental monitoring.

Another interesting aspect of this new two-dimensional semiconductors are their anisotropic electronic and optical properties. The material can be peeled off in layers. The thinnest layers were reached so far only two atomic layers thick.

UMC design and implementation of new Calibre platform reliability verification, and interactive custom design validation

Mentor Graphics Corporation (Nasdaq: MENT) today announced, United Microelectronic Corporation (UMC) is for its customers to develop a new set of IC reference flow reliability. This new process is based on the Calibre® PERC ™ reliability verification platform developed that detects small design flaws, such as may be caused venue (in-field) fault electrostatic discharge (ESD) protection circuit is missing, to help customers improve Long-term reliability of its IC products. This solution includes the UMC and Mentor Graphics are jointly developing a pre-defined check, target customers using UMC 28 nm process all common clients. UMC is expected to debut at the end of this year to check its reliability.

In addition, UMC is also designed to achieve added Calibre RealTime platform solutions. UMC simulation results indicate that the use of Calibre RealTime in custom design to identify and solve physical verification problems can be more than double the productivity.

Calibre RealTime allows design engineers to layout editing software is often used when drawing the respective circuit layout in real time interactive viewing validation errors. Since this tool uses the standard signoff Calibre UMC design kit, UMC customers can also achieve the same efficiency UMC claimed improved.

Director of R & D-cum UMC silicon intellectual property design Support Linshi Qin said: "The circuit reliability checks need to have a special function tool automation system design engineers need to identify a specific circuit structures such as ESD protection circuit, and the internal voltage value can be calculated. to ensure that the circuit voltage of each node is maintained at the limits. At the same time, improve production efficiency is the direction of UMC UMC-house design team and the concerted efforts of customers. By adding design implementation platform Calibre® PERC ™ and Calibre RealTime tools , we can meet these requirements. "

Calibre® PERC ™ solution provides a unique feature that allows you to check the physical layout and schematic netlist information, which include the type and connection between the various components. This logic-driven layout (LDL) ensures that all design analysis capabilities, including UMC IP libraries and customer design meets UMC ESD and electrical overload (EOS) design rules. Important part of ESD / EOS protection techniques include:

• Verify whether the ESD protection circuit in all necessary positions
• Ensure that the IO Pad to power / ground Pad ESD path of least resistance interconnects, and can withstand greater Human Body Model (HBM) surge current
ESD protection diodes and resistors • Check the layout of the components of
• Check the ESD MOS / diode component is covered with the correct symbol layer
• ensuring the protection circuit assembly is properly connected to the power cord, and the voltage range is correct

Other products Calibre® PERC ™ products and co-operation of the Calibre platform, not only can detect violations of reliability design guidelines, but also provides global browsing environment on the circuit connectivity, topology, physical layout and design rules to help design Engineers debugging circuit reliability problems.

Mentor Graphics' Calibre Design Solutions Marketing Senior Director MichaelBuehler-Garcia expressed: "UMC and Mentor have collaborated to develop an automated solution leverages the solution, design engineers can more easily ensure first-class design reliability. while significantly enhance the design verification efficiency. With the automotive, medical and other markets on the reliability of electronic technology and design and development cycle of growing importance, the Calibre® PERC ™ and Calibre RealTime incorporated into your IC Design Toolbox will take you to a significant advantage. "

UMC plans to increase in the future each update release process more reliable inspection.