STMicroelectronics Introduces New SCT20N120 SiC power MOSFET transistors

STMicroelectronics Introduces New SCT20N120 SiC power MOSFET transistor, its advanced energy efficiency and outstanding reliability applications will bring more energy-efficient technology, including electric vehicles and hybrid vehicles inverter, solar or wind power, energy-efficient drives, power supplies and smart grid devices.

STMicroelectronics has one of the industry's few high reliability, high efficiency silicon carbide power semiconductor R & D leader, and always committed to the development and upgrade technology. The launch of the SiC MOSFET 1200VSCT20N120 further expanded product line, with less than 290mΩ on-state resistance (RDS (ON)), and up to 200 ° C maximum operating junction temperature and many other features advantages; its highly stable turn-off energy (Eoff) and gate charge (Qg) allows switching performance consistently over the entire operating temperature range. The final low conduction losses and switching losses with ultra-low leakage current, will help simplify thermal management design, and maximize reliability.

In addition to lower energy consumption, the STMicroelectronics SiC MOSFET switching frequency is also excellent, compared with the same grade silicon insulated gate bipolar transistor (IGBT) is three times higher, which allows designers to use smaller external components, thereby reducing product size, weight and material costs. SCT20N120 temperature resistance can greatly simplify the power supply module, electric vehicles and other applications of the cooling system (cooling-system) design.

SCT20N120 STMicroelectronics unique HiP247 ™ package, the higher thermal efficiency of the tube allows the maximum working temperature up to 200 ° C while still able to maintain compatibility with industry standard TO-247 power package appearance, SCT20N120 has started mass production .